Determination of individual <i>I</i>(<i>V</i>) characteristics of each sub-cell of a triple junction device

Very high conversion efficiency is reached with triple junction solar devices integrated in concentrator photovoltaic (CPV) modules. However, reduction of the active area for micro-CPV applications increases perimeter/area ratio, enhancing losses linked to edges. It therefore important characterize perimeter influence on final efficiency. For this purpose, I ( V ) characterization under dark and/or light could be used as a test sidewalls influence. We have designed an experiment perform curves using three lasers adjustable powers at 405, 785, and 980 nm, preferentially absorbed by top, middle or bottom device, respectively. This was applied commercial made from stack GaInP/GaAs/Ge. In parallel we developed numerical calculation modeling device reproduce behaviors observed during experiments. Junction parameters leakage resistances are deduced fit experimental results calculation. The well presented details. also underlined that, combining both calculation, characteristic each if it isolated can determined.